smd type features adoption of fbet, mbit processes high breakdown voltage and large current capacity absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6v collector current i c 1.5 a collector current (pulse) i cp 2.5 a p c 500 mw p c* 1.5 w jumction temperature t j 150 storage temperature range t stg -55to+150 * mounted on ceramic board (250 mm 2 x 0.8 mm) collector power dissipation electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb =120v,i e =0 1 ua emitter cut-off current i ebo v eb =4v,i c =0 1 ua collector-base breakdown voltage v (br)cbo i c =10ua,i e =0 180 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 160 v emitter-base breakdown voltage v (br)ebo i e =10ua,i c =0 6 v v ce =5v,i c = 100ma 100 400 v ce =5v,i c =10ma 80 collector-emitter saturation voltage v ce(sat) i c =500ma,i b = 50ma 0.13 0.45 v base-emitter saturation voltage v be(sat) i c =500ma,i b = 50ma 0.85 1.2 v gain-bandwidth product f t v ce =10v,i c = 50ma 120 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 14 pf turn-on time t on 40 ns storage time t stg 1.2 us fall time t f 80 ns see test circuit. dc current gain h fe sales@twtysemi.com 1 of 3 http://www.twtysemi.com 2SC3649 product specification 4008-318-123
smd type electrical characteristics curves test circuit h fe classification marking rank r s t h fe 100 200 140 280 200 400 ce sales@twtysemi.com 2 of 3 http://www.twtysemi.com 2SC3649 product specification 4008-318-123
smd type 2SC3649 sales@twtysemi.com 3 of 3 http://www.twtysemi.com product specification 4008-318-123
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